2D P-Type Semiconductors with Oxide N-Channel Transistors For Complementary BEOL CMOS (Stanford, Hanyang)

<p>Researchers from Stanford University and Hanyang University published a technical paper titled “Bridging the p-type gap in oxide electronics with 2D semiconductors.” &#8220;The review assesses manufacturing-aligned pathways to high-performance 2D p-channel transistors, covering transfer-free low-