3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia)

<p>Researchers from San Jose State University and Sandia National Laboratories published a technical paper titled “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” Abstract Excerpt: “In addition to the traditional bottom dielectric