Researchers at imec, KU Leuven, and ASM published a technical paper titled “Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components.” Abstract Excerpt: “Different variable charges such as interface traps, oxide border traps, and mobile carriers
Researchers at imec, KU Leuven, and ASM published a technical paper titled “Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components.” Abstract Excerpt: “Different variable charges such as interface traps, oxide border traps, and mobile carriers can contribute to the total capacitance in metal oxide semiconductor (MOS) field-effect devices. This study aims to quantify these... » read more The post Characterizing Charge Components In TMD-based MOS Structures (imec, KU Leuven, ASM) appeared first on Semiconductor Engineering .