Impact of Band-to-Band Tunneling in the CTL of V-NAND Flash Memory (U. of Seoul, Samsung)

<p>A new technical paper, &#8220;Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory,&#8221; was published by researchers from University of Seoul and Samsung Electronics. &#8220;This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge