Researchers from Georgia Institute of Technology and Synopsys published a technical paper titled “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.” Abstract Excerpt: The paper proposes “a monolithic-3D (M3D) 6T SRAM at the 2nm node” that integrates BEOL I
Researchers from Georgia Institute of Technology and Synopsys published a technical paper titled “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.” Abstract Excerpt: The paper proposes “a monolithic-3D (M3D) 6T SRAM at the 2nm node” that integrates BEOL IGO pass-gates with an all-silicon nanosheet latch, buried power rails, and... » read more The post M3D 6T SRAM With BEOL Pass-Gates at 2nm (Georgia Tech, Synopsys) appeared first on Semiconductor Engineering .